Abstract
a-Si1−xCx:H superlattice structures were fabricated by photo-CVD and glow discharge deposition. The compositional abruptness of the heterojunction has been confirmed by X-ray diffraction and Auger electron spectroscopy. The optical bandgap of amorphous silicon-based superlattices increases as the well layer thickness decreases. The existence of quantized levels in a-Si:H wells is demonstrated by the observation of resonant tunneling current through the three-barrier two-well structure.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
P.G. Lecomber, W.E. Spear, R.A. Gibson, J. Non-Cryst. Solids. 77 & 78, 1081 (1985).
H. Itoh, S. Matsubara, S.I. Maramatsu, N. Nakamura, T. Shimada, Technical Digest of the International PVSE-3, Tokyo, 37 (1987).
S. Tsuda, H. Tarui, T. Matsuyama, T. Takahama, S. Nakayama, Y. Hishikawa, N. Nakamura, T. Fukatsu, M. Ohnishi, S. Nakano, Y. Kawano, Jpn.J.Appl. phys, 26(2), 28(1987).
R. Cheng, S. Wen, J. Feng, J. Non-Cryst. Solids 77 & 78. 1061 (1985).
S. Nishikawa, H. Kakinuma, H. Fukuda, T. Watanabe, K. Nihei, J. Non-Cryt. Solids, 77 & 78. 1077, (1985).
S. Miyazaki, Y. Ihara and M. Hirose, Extended Abstracts, 18th Conf. on Solid State Dev. and Mater., Tokyo, 675 (1986).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Nebel, C.E., Kessler, F., Bilger, G. et al. Evidence of Quantum Size Effects in a-Si:H/a-Si1−xCx:H Superlattices. MRS Online Proceedings Library 118, 361 (1988). https://doi.org/10.1557/PROC-118-361
Published:
DOI: https://doi.org/10.1557/PROC-118-361