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Beam Shaping for CW Laser Recrystallization of Polysilicon Films

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Abstract

A shaped laser beam has been used for laterally seeded recrystallization of polysilicon films over oxide. Direct maps of the shaped-beam intensity distribution in the wafer plane are correlated with the grain structure of the recrystallized polysilicon. Using 60% overlapping of shapedbeam scans along <100> directions, we have obtained seeded areas one mm wide and 50 to 500 µm long. These consist of 40 µm-wide adjacent single-crystal strips regularly separated by low-angle grain boundaries extending laterally away from the seed openings. The spacing between grain boundaries is equal to the scan spacing, providing a means for controlling the location of grain boundaries in otherwise defect-free, single-crystal films.

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Acknowledgements

We wish to thank Curt Heimberg for TEM sample preparation and assistance with the optical system, and Drs. Dragan IIic and Fred Schwettmann for encouragement during the course of the experiment.

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Authors and Affiliations

  1. Hewlett-Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA, 94304

    P. Zorabedian, C. I. Drowley, T. I. Kamins & T. R. Cass

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  1. P. Zorabedian
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  2. C. I. Drowley
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  3. T. I. Kamins
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  4. T. R. Cass
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Zorabedian, P., Drowley, C.I., Kamins, T.I. et al. Beam Shaping for CW Laser Recrystallization of Polysilicon Films. MRS Online Proceedings Library 13, 523–528 (1982). https://doi.org/10.1557/PROC-13-523

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  • DOI: https://doi.org/10.1557/PROC-13-523

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