Abstract
Metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) are well established methods for growing epitaxial GaAs and AlGaAs films. However, MOCVD equip- ment uses the highly toxic gas, arsine, and MBE equipment is very costly and coats only one wafer at a time. We have developed a vacuum chemical epitaxy (VCE) reactor which avoids the use of arsine and allows multiple wafers to be coated in a production environment.
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Fraas, L.M., Girard, G.R., Sundaram, V.S. et al. Vacuum Chemical Epitaxy: High Throughput GaAs Epitaxy Without Arsine. MRS Online Proceedings Library 145, 253–258 (1989). https://doi.org/10.1557/PROC-145-253
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DOI: https://doi.org/10.1557/PROC-145-253