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In-Situ Preparation and Characterization of Superconducting Thin Films and Related Materials by Mocvd for the Development of Three Terminal Switching Devices

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Abstract

Metalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a major technique for the fabrication of high temperature superconductor devices. In this paper, we present preliminary results of in-situ deposition of Y-Ba-Cu-0 thin films (Tc = 79K) by rapid isothermal processing assisted MOCVD on BaF2/silicon substrates.

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References

  1. R. Singh, S. Sinha, P. Chou, N. J. Hsu, F. Radpour, H. S. Ullal, and A. J. Nelson, J. App. Phys. 66, 6179 (1989).

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  2. R. Singh, R. P. S. Thakur, A. Kumar, P. Chou, and J. Narayan, Appl. Phys. Lett. 56, 247 (1990).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. School of Electrical Engineering and Computer Science, University of Oklahoma, Norman, OK, 73019, USA

    R. Singh, S. Sinha & J. Narayan

  2. Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695-7916, USA

    J. Narayan

Authors
  1. R. Singh
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  2. S. Sinha
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  3. J. Narayan
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Singh, R., Sinha, S. & Narayan, J. In-Situ Preparation and Characterization of Superconducting Thin Films and Related Materials by Mocvd for the Development of Three Terminal Switching Devices. MRS Online Proceedings Library 169, 1129–1132 (1989). https://doi.org/10.1557/PROC-169-1129

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  • DOI: https://doi.org/10.1557/PROC-169-1129

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