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The Transport Properties and Defect Chemistry of La2-XSrXCuO4-δ

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Abstract

La2-xSrxCuO4-δ has been studied to determine the role of dopants and oxygen stoichiometry on the transport properties and defect chemistry of this system. The conductivity was found to reach a maximum for 0.2 < x < 0.3 which reflects a change from electronic to ionic compensation of the Sr dopant at large values of x. A metal to semiconductor transition is observed for x > 0.6 for temperatures below ∼ 600°C. However, the source of this behavior is not clear, given that an increasing amount of second phase was observed for x > 0.4. The conductivity and thermoelectric power (TEP) of La2CuO4 show a Po21/6 dependence and a temperature independence, implying that the hole mobility is not thermally activated and the enthalpy of oxidation is nearly zero. This last conclusion is confirmed by TGA data.

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Authors and Affiliations

  1. Crystal Physics & Optical Electronics Laboratory, Department of Materials Science & Engineering, Massachusetts Institute of Technology, Cambridge, MA, 01239, USA

    Ming-Jinn Tsai, Elizabeth J. Opila & Harry L. Tuller

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  1. Ming-Jinn Tsai
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  2. Elizabeth J. Opila
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  3. Harry L. Tuller
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Tsai, MJ., Opila, E.J. & Tuller, H.L. The Transport Properties and Defect Chemistry of La2-XSrXCuO4-δ . MRS Online Proceedings Library 169, 65–68 (1989). https://doi.org/10.1557/PROC-169-65

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  • DOI: https://doi.org/10.1557/PROC-169-65

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