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Sol-Gel Thin Film Electronic Properties

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We have explored the effects of various processing parameters on the dielectric andelectronic integrity of sol-gel derived silicate thin films and have identified several factors that strongly affect the thin film electronic properties. We find that sol-gel dielectrics can exhibit excellent dielectric integrity: viz., low interface trap densities and fairly good insulating properties approaching those of a thermally grown SiO2 film on Si.

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Authors and Affiliations

  1. The Pennsylvania State University, University Park, PA, 16802, USA

    W. L. Warren, P. M. Lenahan & G. R. Shaffer

  2. Sandia National Laboratories, Albuquerque, NM, 87185, USA

    C. J. Brinker, C. S. Ashley & S. T. Reed

Authors
  1. W. L. Warren
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  2. P. M. Lenahan
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  3. C. J. Brinker
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  4. G. R. Shaffer
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  5. C. S. Ashley
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  6. S. T. Reed
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Warren, W.L., Lenahan, P.M., Brinker, C.J. et al. Sol-Gel Thin Film Electronic Properties. MRS Online Proceedings Library 180, 413 (1990). https://doi.org/10.1557/PROC-180-413

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  • DOI: https://doi.org/10.1557/PROC-180-413

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