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A Model for CW Laser Recrystallization including Reflectivity Effects

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Abstract

A simple, practical model is developed for cw laser recrystallization of silicon and SOI structures, taking into account spatial variations in optical reflectivity. The power absorption is assumed to be uniform within each of three regions: the central molten spot, the annular two-phase region, and an outer annulus to account for absorption in the solid phase. Analytic expressions are obtained for the radial and depth dependence of the temperature, for the melt depth, the melt radius, the melt threshold, the crystallization threshold and the substrate melt threshold. SOI structures are considered and comparison with some experimental results shows excellent agreement.

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Acknowledgements

I wish to thank H.M. Naguib, A.A. Naera and T.W. MacElwee for several useful comments and discussions.

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Authors and Affiliations

  1. Northern Telecom Electronics Ltd., P.O. Box 3511, Station C, Ottawa, Canada, K1Y 4H7

    I. D. Calder

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  1. I. D. Calder
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Calder, I.D. A Model for CW Laser Recrystallization including Reflectivity Effects. MRS Online Proceedings Library 23, 507–512 (1983). https://doi.org/10.1557/PROC-23-507

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  • DOI: https://doi.org/10.1557/PROC-23-507

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