Abstract
Epitaxial Ni and Co suicides have been fabricated using pulsed laser melting. Interfacial instabilities and cell formation are suppressed during the liquid-phase epitaxy by melting mono or di-silicide layers. Single crystal NiSi2 and CoSi2 films have been grown on (100) and (111) Si following a post-anneal. This method does not require UHV deposition or reaction techniques.
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Tung, R.T., Gibson, J.M., Jacobson, D.C. et al. Liquid Phase Growth of Epitaxial Ni and Co Silicides by Pulsed Laser Irradiation. MRS Online Proceedings Library 23, 721–726 (1983). https://doi.org/10.1557/PROC-23-721
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DOI: https://doi.org/10.1557/PROC-23-721