Abstract
The early stages of the microwave assisted chemical vapor deposition of diamond on fused silica and silicon substrates were examined with Raman spectroscopy and scanning electron microscopy. Grain size as a function of time was determined for both substrates. Grains formed on fused silica were larger, with smoother growth surfaces than those formed on silicon substrates under the same conditions. For deposition on silica, the particle morphology changes from cuboid to cubo-octahedral for deposition times between 5 and 15 minutes. Also, the glass surfaces were etched during the pretreatment and deposition stages. These results are discussed in terms of mass transport limited growth, and chemical interactions between the gas-phase and the substrate surface.
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Acknowledgement
This work was supported by the Air Force Office of Scientific Research, under contract AFOSR-91-0357 with Brown University. Janet Rankin was also supported by the Office of Naval Research, as a Science Scholar at the Bunting Institute.
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Rankin, J., Shigesato, Y., Boekenhauer, R. et al. The Early Stages of Microwave-Assisted Chemical Vapor Deposition of Diamond on Fused Silica Substrates. MRS Online Proceedings Library 270, 317–322 (1992). https://doi.org/10.1557/PROC-270-317
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DOI: https://doi.org/10.1557/PROC-270-317