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Electrical Conductivity as a Function of Temperature of Diamond films Grown by Downstream Microwave Plasma Chemical Vapor Deposition

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Abstract

Electrical conductivity measurements were used to study the effects that sample distance from the plasma during growth has on the carrier transport properties of undoped CVD diamond. The films were grown by downstream microwave plasma chemical vapor deposition at distances from 0.5 to 2.0 cm from the edge of plasma glow. Electrical conductivity measurements were performed between room temperature and 1000 °C to gain a better understanding of the CVD growth process and the resulting electrical properties of the diamond film's. Room temperature electrical conductivity was found to vary by over 5 orders of magnitude with increasing growth distance from the plasma, and this is attributed to decreasing hydrogen incorporation efficiencies at further distances from the plasma.

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Acknowledgement

This research was financially supported in part by SOlO/IST through ONR and the Kobe Steel, Ltd. Professorship at NCSU.

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Authors and Affiliations

  1. Department of Materials Science, North Carolina State University, Raleigh, NC, 27695-7919

    Brian R. Stoner, Jesko A. von Windheim & Jeffrey T. Glass

  2. Jet Propulsion Laboratory, Pasadena, CA, 91109

    Danny Zoltan & Jan W. Vandersande

Authors
  1. Brian R. Stoner
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  2. Jesko A. von Windheim
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  3. Jeffrey T. Glass
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  4. Danny Zoltan
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  5. Jan W. Vandersande
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Stoner, B.R., von Windheim, J.A., Glass, J.T. et al. Electrical Conductivity as a Function of Temperature of Diamond films Grown by Downstream Microwave Plasma Chemical Vapor Deposition. MRS Online Proceedings Library 270, 413–418 (1992). https://doi.org/10.1557/PROC-270-413

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  • DOI: https://doi.org/10.1557/PROC-270-413

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