Abstract
Electron spin resonance and related spin dependent measurements have been used to make key contributions to the understanding of amorphous silicon, specifically as probes of the dominant states in the gap, recombination processes and doping. In this paper we give a cursory description of the techniques as they apply to this problem. We then review what has been learned in a-Si:H usually from coupled results of spin resonance and other complementary experimental techniques. The results lead us to a surprisingly simple picture of the equilibrium and non-equilibrium behavior of defects and carriers in this prototypical amorphous semiconductor.
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Biegelsen, D.K. Electron Spin Resonance Studies of Amorphous Silicon. MRS Online Proceedings Library 3, 85 (1980). https://doi.org/10.1557/PROC-3-85
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DOI: https://doi.org/10.1557/PROC-3-85