Abstract
The purpose of this article is to present the modeling routes for the chemical vapor deposition process with a special emphasis to mass transport models with near local thermochemical equilibrium imposed in the gas-phase and at the deposition surface. The theoretical problems arising from the linking of the two selected approaches, thermodynamics and mass transport, are shown and a solution procedure is proposed. As an illustration, selected results of thermodynamic and mass transport analysis and of the coupled approach showed that, for the deposition of Sii-xGex solid solution at 1300 K (system Si-Ge-Cl-H-Ar), the thermodynamic heterogeneous stability of the reactive gases and the thermal diffusion led to the germanium depletion of the deposit.
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References
K.F. Jensen, in Microelectronics Processing: Chemical Engineering Aspects, edited by D.W. Hess and K.F. Jensen, Advances in Chemistry Series 221 (American Chemical Society, Washington DC, 1989) pp. 199–263.
S.A. Gokoglu, in Chemical Vapor Deposition of Refractory Metals and Ceramics II, edited by T.M. Besmann, B.M. Gallois and J.W. Warren (Materials Research Society Symp. 250, Pittsburgh, PA, 1992) pp 17–28.
C.R. Kleijn, C. Werner, Modeling of Chemical Vapor Deposition of Tungsten Films (Birkhaüser, Verlag, 1993).
P. Ho, M.E. Coltrin, J.S. Binkley, C.F. Melius, J. Phys. Chem., 89, 4647 (1985).
K.E. Spear, R.R. Dirkx, High Temp. Sci., 27, 107 (1990).
M. Pons, C. Bernard, R. Madar, Surf. Coat. Technol., 61, 274 (1993).
M.D. Allendorf, J. Electrochem. Soc., 140 (3), 747 (1993).
D. E. Rosner, J. Collins, in Chemical Vapor Deposition of Refractory Metals and Ceramics, edited by T.M. Besmann and B.M. Gallois (Materials Research Society Symp. 168, Pittsburgh, PA, 1990) pp 43–48.
S.A. Gokoglu, J. Electrochem. Soc., 135, 1562 (1988).
D. Zhu, Y. Sahai, Metall. Trans., 322, 309 (1991).
M. Pons, J.N. Barbier, C. Bernard, R. Madar, Appl. Surf. Sci., 73, 71 (1993).
M.E. Coltrin, R.J. Kee, F.M. Rupley, Inst. J. Chem. Kin., 23, 1111 (1991).
M.E. Coltrin, R.J. Kee, J.A. Miller, J. Electrochem. Soc., 133, 1206 (1986).
M.E. Coltrin, R.J. Kee, G.H. Evans, J. Electrochem. Soc., 136, 819 (1989).
J.P. Couderc, P. Duverneuil, J. Electrochem. Soc., 139, 296 (1992).
M.D. Allendorf, R.J. Kee, J. Electrochem. Soc., 138 (3), 1841 (1991).
S.A. Gokoglu, M.A. Kuczmarski, in CVD-XII International Symposium on Chemical Vapor Deposition, edited by K.F. Jensen and G.W. Cullen, Proceeding Volume 93–2 (The Electrochemical Society, Pennington, NJ, 1993) pp. 392–400.
E. Blanquet, S.A. Gokoglu, in ref. 17, 103–109.
T.J. Mountziaris, K.F. Jensen, J. Crystal Growth, 138, 2426 (1991).
M. Frenklach, H. Wang, Phys. Rev., B 43, 1520 (1991).
J.N. Barbier, C. Bernard, Proceedings of the 15 th Calphad Meeting, edited by B.L. Kaufman, Calphad (1986) 206.
SGTE databank, Scientific Group Thermodata Europe, BP 66, 38402 Saint-Martin d'Hères, France.
H. Rouch, PhD Thesis, Institut National Polytechnique de Grenoble, 1994.
C. Bergman, R. Chastel, R. Castanet, J. Phase Equi., 13, 2 (1992).
M. Pons, A. Benezech, P. Huguet, R. Gaufres, Ph. Diez, J. CVD (in press).
R.B. Bird, W.E. Stewart, E.N. Lightfoot, Transport Phenomena, (Wiley, NY, 1960).
Flux Expert, DT2I, Chemin des Prèles, 38240 Meylan, France, 1994.
Acknowledgments
This work was supported by the Centre National de la Recherche Scientifique. The authors acknowledge the referee for valuable recommendations
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Pons, M., Bernard, C., Rouch, H. et al. The Modeling Routes for the Chemical Vapor Deposition Process. MRS Online Proceedings Library 363, 15–26 (1994). https://doi.org/10.1557/PROC-363-15
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DOI: https://doi.org/10.1557/PROC-363-15