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Detection Limit of Large Area Id Thin Film Position Sensitive Detectors Based in a-Si:H P.I.N. Diodes

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Abstract

The aim of this work is to provide the basis for the interpretation of the steady state lateral photoeffect observed in p-i-n a-Si:H ID Thin Film Position Sensitive Detectors (ID TFPSD). The experimental data recorded in ID TFPSD devices with different performances are compared with the predicted curves and the obtained correlation’s discussed.

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Authors and Affiliations

  1. Materials Science Dep., Faculty of Science and Technology of New University of Lisbon and Centre of Excellence for Microelectronics and Optoelectronic Processes - CEMOP-UNINOVA Quinta da Torre, P-2825, Monte de Caparica, Portugal

    R. Martins, G. Lavareda, F. Soares & E. Fortunato

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  1. R. Martins
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  2. G. Lavareda
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  3. F. Soares
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  4. E. Fortunato
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Martins, R., Lavareda, G., Soares, F. et al. Detection Limit of Large Area Id Thin Film Position Sensitive Detectors Based in a-Si:H P.I.N. Diodes. MRS Online Proceedings Library 377, 791–796 (1995). https://doi.org/10.1557/PROC-377-791

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