Abstract
Excitonic recombination processes in GaN films grown by low pressure metalorganic chemical vapor deposition technique have been studied in the temperature range between 6K to 320K by photoluminescence spectroscopy. Low temperature photoluminescence spectra of high resistivity films show well-resolved spectral features associated with the excitonic interband transitions. A detailed spectral analysis allowed us to estimate the exciton binding energy and the energy gap. Spectral studies of Si-doped GaN films demonstrate that the high energy recombination processes in these films are dominated by excitons bound to neutral Si donors. Comparison between the recombination channels in high resistivity and in Si-doped films indicated that Si has a larger exciton binding energy than the unknown pervasive donor in undoped materials. These results confirm the excellent electronic properties of the undoped and doped films.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Y. C. Chang, D. Z.-Y. Ting, J. Y. Tang and K. Hess, Appl. Phys. Lett. 42, 76 (1983).
S. Nakamura, to be published in Topical Wokshop on III-V Nitrides, edited by K. Onabe, S. Fujishiro and H. Morkoç, Nagoya, Japan, 1995.
S.C. Binari, to be published in Topical Wokshop on III-V Nitrides, edited by K. Onabe, S. Fujishiro and H. Morkoç, Nagoya, Japan, 1995.
A.E. Wickenden, L.B. Rowland, K. Doverspike, D.K. Gaskill, J.A. Freitas, Jr., D.S. Simons, and P.H. Chi, J. Electron. Mater., 24, p. 1547 (1995).
S.G. Bishop and J.A. Freitas, Jr., J. Cryst. Growth, 106, 38 (1990).
L.B. Rowland, K. Doverspike, A. Giordana, M. Fatemi, D.K. Gaskill, M. Skowronski, and J.A. Freitas, Jr. in Silicon Carbide and Related Materials, edited by M.G. Spencer, R.P. Devaty, J.A. Edmond, M.A. Khan, R. Kaplan, M. Rahman (Inst. Phys. Conf. Ser., 137, 1989) p. 429 – 432.
M.A. Khan, D.T. Olson, J. N. Kuznia, W.E. Carlos, and J.A. Freitas, Jr., J. Appl. Phys., 74, 5901 (1993).
R. Dingle, D.D. Sell, S.E. Stokowski, M. Ilegems, Phys. Rev. B, 58, 1211 (1971).
H.G. Grimmeis and B. Monemar, J. Appl. Phys., 41, 4054 (1970).
E.R. Glaser, T.A. Kennedy, H.C. Crookham, J.A. Freitas, Jr., M.A. Khan, D.T. Olson, and J.N. Kuznia, Appl. Phys. Lett., 63, 2673 (1993).
K. Doverspike, A.E. Wickenden, S.C. Binari, D.K. Gaskill, J.A. Freitas, Jr., D.S. Simons, and P.H. Chi, to be published in Topical Wokshop on III-V Nitrides, edited by K. Onabe, S. Fujishiro and H. Morkoç, Nagoya, Japan, 1995.
W. Shan, T.J. Schmidt, X.H. Yang, S.J. Hwang, J.J. Song, and B. Goldenberg, Appl. Phys. Lett., 66, 985 (1995).
J. A. Freitas, Jr., S.G. Bishop, P.E.R. Nordquist, and M.L. Gipe, Appl. Phys. Lett., 52, 1695 (1988).
J.R. Haynes, Phys. Rev. Lett., 4, 361 (1960).
J.A. Freitas, Jr., and M.A. Khan in Diamond, SiC and Nitride Wide Bandgap Semiconductors, edited by C.H. Carter, Jr., G. Gildenblat, S. Nakamura, and R.J. Nemanich (Mater. Res. Proc. 339, Pittsburgh, PA 1994), p. 547–552.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Freitas, J., Doverspike, K. & Wickenden, A. Excitonic Recombination Processes in Undoped and Doped Wurtzite GaN Films Deposited on Sapphire Substrates. MRS Online Proceedings Library 395, 485–490 (1995). https://doi.org/10.1557/PROC-395-485
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-395-485