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Schottky Barrier Heights of Ni, Pt, Pd, and Au on n-type GaN

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Abstract

Schottky barrier heights of Ni, Pt, Pd, and Au on n-type GaN were measured using current-voltage and capacitance-voltage techniques. Measurements from the I-V technique yielded barrier heights of 0.95, 1.01, 0.94, and 0.87 eV for Ni, Pt, Pd, and Au, respectively. Barrier heights of 1.13,1.16, 1.07, and 0.98 eV, for Ni, Pt, Pd, and Au, respectively, were obtained using C-V measurements.

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Authors and Affiliations

  1. Center for Compound Semiconductor Microelectronics, and Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, Illinois, 61801, USA

    A.C. Schmitz, A.T. Ping & I. Adesida

  2. APA Optics, Inc., Blaine, Minnesota, 55449, USA

    M. Asif khan

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  1. A.C. Schmitz
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  2. A.T. Ping
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  3. M. Asif khan
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  4. I. Adesida
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Schmitz, A., Ping, A., Asif khan, M. et al. Schottky Barrier Heights of Ni, Pt, Pd, and Au on n-type GaN. MRS Online Proceedings Library 395, 831–835 (1995). https://doi.org/10.1557/PROC-395-831

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  • DOI: https://doi.org/10.1557/PROC-395-831

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