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Effects of Arsenic Deactivation on Arsenic-Implant Induced Enhanced Diffusion in Silicon

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Abstract

The enhanced diffusion of boron due to high dose arsenic implantation into silicon is studied as a function of arsenic dose. The behavior of both the type-V and end-of-range loops is investigated by transmission electron microscopy (TEM). The role of arsenic deactivation induced interstitials and type-V loops on enhanced diffusion is assessed. Reduction of the boron diffusivity is observed with increasing arsenic dose at three different temperatures. The possible explanations for this reduction are discussed.

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Authors and Affiliations

  1. Department of Electrical Engineering, University of Florida, 339 Larsen Hall, Gainesville, Florida, 32611, USA

    O. Dokumaci & M. E. Law

  2. Department of Materials Science, University of Florida, Gainesville, Florida, 32611, USA

    V. Krishnamoorthy & K. S. Jones

Authors
  1. O. Dokumaci
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  2. M. E. Law
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  3. V. Krishnamoorthy
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  4. K. S. Jones
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Dokumaci, O., Law, M.E., Krishnamoorthy, V. et al. Effects of Arsenic Deactivation on Arsenic-Implant Induced Enhanced Diffusion in Silicon. MRS Online Proceedings Library 396, 167 (1995). https://doi.org/10.1557/PROC-396-167

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  • DOI: https://doi.org/10.1557/PROC-396-167

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