Abstract
The optical gain of a BGaN ternary system lattice-matched to 6H-SiC was estimated. The parameters used in this estimation, such as effective mass and a bandgap energy, were estimated according to Harrison's theory. The optical gain was estimated using the density matrix theory with intraband relaxation broadening. The transparency carrier density of BGaN is slightly only smaller than that of GaN. It may be possible to fabricate a BGaN-based semiconductor laser operating in the UV spectral region.
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Acknowledgments
The authors would like to thank Professor Emeritus Y. Suematsu of Tokyo Institute of Technology for encouragement. They also thank Professor M. Asada for suggestions. This study was partly supported by a Grant-in-Aid for the Encouragement of Young Scientists from the Ministry of Education, Science, Sports and Culture (“Fabrication of GaN-Based VCSEL Structure Using Selective Growth on Conductive Substrates,” #09750012) and “Research for Future” Program (No. JSPS-RFTF97P00102) from the Japan Society for the Promotion of Science.
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Honda, T., Tsubamoto, M., Kuga, Y. et al. Optical Gain in BGaN Lattice-Matched to (0001) 6H-SiC. MRS Online Proceedings Library 482, 1103–1107 (1997). https://doi.org/10.1557/PROC-482-1125
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DOI: https://doi.org/10.1557/PROC-482-1125