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High-pressure investigation of InGan quantum wells

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Abstract

We have studied the pressure dependence of photoluminescence for various InGaN quantum wells of different Indium compositions. In contrast to classical quantum well systems such as GaAs/AlGaAs, the pressure coefficients of the photoluminescence peak position of wells of similar parameters can vary greatly, depending on conditions of growth. Generally, the pressure coefficient of the emission peak is much lower than the one predicted for a GaN-InN system. We show that this behavior can be related in most cases to the influence of the thick GaN layer compressibility on the strain in the InGaN quantum wells. However, in some cases (Nichia devices), the pressure coefficient of the emission peak seems to be unrelated to the shift of the energy gap of the material, suggesting the involvement of strongly localized electronic states

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Authors and Affiliations

  1. Lawrence Berkeley Laboratory and University of California at Berkeley, Berkeley, CA, 94720, USA

    Piotr Perlin, Christian Kisielowski & Eicke R. Weber

  2. Physics Department, SUNY at Buffalo, USA

    Valentin Iota & Bernie A. Weinstein

  3. High Pressure Research Center, “Unipress”, Warsaw, Poland

    Henryk Teisseyre & Tadeusz Suski

  4. CHTM, University of New MexicoUSA, USA

    Steeve Hersee

  5. APA Optics, USA

    Jinwei Yang

  6. On leave from High Pressure Research Center, Warsaw, Poland

    Piotr Perlin

Authors
  1. Piotr Perlin
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  2. Valentin Iota
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  3. Bernie A. Weinstein
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  4. Henryk Teisseyre
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  5. Tadeusz Suski
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  6. Steeve Hersee
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  7. Christian Kisielowski
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  8. Eicke R. Weber
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  9. Jinwei Yang
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Correspondence to Piotr Perlin.

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Perlin, P., Iota, V., Weinstein, B.A. et al. High-pressure investigation of InGan quantum wells. MRS Online Proceedings Library 512, 399–404 (1998). https://doi.org/10.1557/PROC-512-399

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  • DOI: https://doi.org/10.1557/PROC-512-399

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