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Influence of Doping on the Lattice Dynamics of Gallium Nitride

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Abstract

We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, grown by molecular beam epitaxy (MBE). The influence of the different dopants on strain and free-carrier concentration was investigated. Furthermore, we report on several local vibrational modes (LVM) around 2200 cm-1 in Raman spectra of highly Mg-doped GaN. A possible explanation of these high-energy modes in terms of hydrogen-related vibrations is given. We also found a variety of new structures in the range of the GaN host lattice phonons. Secondary ion mass spectroscopy (SIMS) was applied to determine the concentration of magnesium and unintentionally incorporated hydrogen.

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Author notes

  1. H. Siegle

    Present address: Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA

Authors and Affiliations

  1. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623, Berlin, Germany

    A. Kaschner, H. Siegle, A. Hoffmann & C. Thomsen

  2. Institut für Festkörperphysik, FB 1, USA Univ. Bremen, Kufsteiner Str. NW 1, 28359, Bremen, Germany

    U. Birkle, S. Einfeldt & D. Hommel

Authors
  1. A. Kaschner
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  2. H. Siegle
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  3. A. Hoffmann
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  4. C. Thomsen
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  5. U. Birkle
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  6. S. Einfeldt
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  7. D. Hommel
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Kaschner, A., Siegle, H., Hoffmann, A. et al. Influence of Doping on the Lattice Dynamics of Gallium Nitride. MRS Online Proceedings Library 537, 357 (1998). https://doi.org/10.1557/PROC-537-G3.57

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  • DOI: https://doi.org/10.1557/PROC-537-G3.57

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