Skip to main content
SpringerLink
Log in

Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

Extrinsic effects on the DC output characteristics of AlGaN/GaN HFETs with 1μm gate lengths are examined. The devices investigated were fabricated on MOCVD-grown AlGaN/GaN heterostructures on sapphire substrates. An analytical model that takes into account parasitic resistances and thermal effects is constructed, and its results are compared with experimental data. With parameters determined from characterization experiments on the same wafer and from independent theoretical results, the agreement between the data and the model predictions is found to be very good. The model is then applied to performance predictions for devices with improved series resistances and heat sinking.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. N.X. Nguyen, C. Nguyen, and D.E. Grider, Electronics Lett., 34, 811 (1998).

    Article  CAS  Google Scholar 

  2. G.J. Sullivan, J.A. Higgins, M.Y. Chen, J.W. Yang, Q. Chen, R.L. Pierson, and B.T. McDermott, Electronics Lett., 34, 922 (1998).

    Article  CAS  Google Scholar 

  3. S.T. Sheppard, K. Doverspike, W.L. Pribble, S.T. Allen, J.W. Palmour, L.T. Kehias, and T.J. Jenkins, Abstracts of 1998 Device Research Conference, Charlottesville, VA (1998).

    Google Scholar 

  4. P.P. Ruden, IEEE Trans. Electron Devices, 37, 2267 (1990).

    Article  Google Scholar 

  5. J.D. Albrecht, R.P. Wang, P.P. Ruden, M. Farahmand, and K.F. Brennan, J. Appl. Phys., 83, 4777 (1998).

    Article  CAS  Google Scholar 

  6. M. Shur, Physics of Semiconductor Devices, Prentice-Hall, Inc., Englewood Cliffs, NJ (1990).

    Google Scholar 

  7. T. Ando, A.B. Fowler, F. Stern, Rev. Mod. Phys., 54, 437 (1982).

    Article  CAS  Google Scholar 

  8. P.P. Ruden, M. Shur, A.I. Akinwande, J.C. Nohava, D.E. Grider, and J. Baek, IEEE Trans. Electron Devices, 37, 2171 (1990).

    Article  CAS  Google Scholar 

  9. K. Ikossi-Anastasiou, A. Ezis, and A.K. Rai, IEEE Trans. Electron Devices, 35, 1786 (1988).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. ECE Department, University of Minnesota, Minneapolis, MN, 55455, USA

    P. P. Ruden, J. D. Albrecht, A. Sutandi, S. C. Binaril & K. Ikossi-Anastasiou

  2. Electronics Science and Technology Div., Naval Research Laboratory, Washington, DC, 20375, USA

    M. G. Ancona, R. L. Henry, D. D. Kolesket & A. E. Wickendent

Authors
  1. P. P. Ruden
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. J. D. Albrecht
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. Sutandi
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. S. C. Binaril
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. K. Ikossi-Anastasiou
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. M. G. Ancona
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. R. L. Henry
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. D. D. Kolesket
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. A. E. Wickendent
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Ruden, P.P., Albrecht, J.D., Sutandi, A. et al. Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors. MRS Online Proceedings Library 537, 635 (1998). https://doi.org/10.1557/PROC-537-G6.35

Download citation

  • Published:

  • DOI: https://doi.org/10.1557/PROC-537-G6.35

Search

Navigation