Abstract
DC and intrinsic small signal parameters are reported for AlGaN/GaN high electron mobility transistors. The calculations are based upon a self-consistent solution of Schrödinger and Poisson’s equation to model the quantum well formed in GaN. Transport parameters are obtained from an ensemble Monte Carlo simulation.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
S. C. Binari, J. M. Redwing, G. Kelner and W. Kruppa, Electron. Lett., vol. 33, No. 3, p. 242, 1997.
S. C. Binari, Electrochem. Soc. Proc., 95-21, p. 136, 1995.
J. M. Redwing, M. A. Tischler, J. S. Flynn, S. Elhamri, M. Ahoujja, R. S. Newrock and W. C. Mitchel, Appl. Phys. Lett., vol. 69, p. 963, 1996
P. M. Asbeck, E. T. Yu, S. S. Lau, G. J. Sullivan, J. Van Hove and J. Redwing, Electron. Lett., p. 241, Aug. 1997.
R. T. Webster and A.F.M. Anwar, MRS Proc. vol. 428, p.929, 1997.
M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott and J. A. Higgins, IEEE Electron Dev. Lett., vol. 17, No.7, p. 325, 1996.
M. S. Shur and M. A. Khan, MRS Bull., p. 44, Feb., 1997
J. M. Redwing, M. A. Tischler, J. S. Flynn, S. Elhamri, M. Ahoujja, R. S. Newrock and W. C. Mitchel, Appl. Phys. Lett., vol. 69, p. 963, 1996
S. Strite and H. Morkoc, J. Vac. Sci. Technol., vol. B 10, No. 4, p. 1237, 1992.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Wu, S., Webster, R.T. & Anwar, A.F.M. Physics-Based Intrinsic Model for AlGaN/GaN HEMTs. MRS Online Proceedings Library 537, 658 (1998). https://doi.org/10.1557/PROC-537-G6.58
Published:
DOI: https://doi.org/10.1557/PROC-537-G6.58