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Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

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Abstract

InGaN alloys with indium compositions ranging from 0-40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

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Authors and Affiliations

  1. Department of Physics, Carnegie Mellon University, Pittsburgh, PA, 15213, USA

    Huajie Chen, A. R. Smith & R. M. Feenstra

  2. Department of Electrical and Computer Engineering, Carnegie Mellon University, USA

    D. W. Greve

  3. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA, 94304, USA

    J. E. Northrup

  4. Dept. of Physics and Astronomy, Ohio University, Athens, Ohio, 45701, USA

    A. R. Smith

Authors
  1. Huajie Chen
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  3. R. M. Feenstra
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  4. D. W. Greve
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  5. J. E. Northrup
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Chen, H., Smith, A.R., Feenstra, R.M. et al. Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy. MRS Online Proceedings Library 537, 950 (1998). https://doi.org/10.1557/PROC-537-G9.5

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  • DOI: https://doi.org/10.1557/PROC-537-G9.5

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