Abstract
Organic light emitting diodes have been fabricated using erbium tris(8-hydroxy-quinoline) as the emitting layer and N, N′-diphenyl-N, N′-bis(3-methylphenyl)-1, 1′-biphenyl-4, 4’-diamine (TPD) as the hole transporting layer. Room temperature electroluminescence was observed at 1.5 µm due to intra-atomic transitions between the4I13/2 and4I15/2 levels in the Er3+, ion. These results make the possibility of producing silicon compatible 1.5 µm technology based on such devices a reality.
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Curry, R.J., Gillin, W.P. 1.5 µm Luminescence from ErQ Based Organic Light Emitting Diodes. MRS Online Proceedings Library 558, 481–484 (1999). https://doi.org/10.1557/PROC-558-481
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DOI: https://doi.org/10.1557/PROC-558-481