Skip to main content
SpringerLink
Log in

The microstructure and electrical properties of directly deposited TiN ohmic contacts to Gallium Nitride

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

When the stoichiometric TiN was deposited directly on GaN, we obtained columnar TiN grains of 5-20 nm section which cross the whole film thickness and are rotated mostly around the [111] axis. The conventional epitaxial relationship is obtained and no amorphous patches are observed at the interface. The deposition of TiN on Si doped GaN layers lead to the formation of an ohmic contact, whereas we obtain a rectifying contact on p type layers.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. M.E. Lin, F. Ma, F.Y. Huang, Z. F. Fan, L.H. Allen, and H. Morkoç, Appl. Phys. Lett. 64, 1003(1994)

    Article  CAS  Google Scholar 

  2. Z. Fan, S.N. Mohammad, W. Kim, O. Actas, A.E. Botchkarev, and H. Morkoç, Appl. Phys. Lett., 68, 1672(1996)

    Article  CAS  Google Scholar 

  3. S. Rusimov, Z. Liliental-Weber, J. Washburn, K.J. Dustad, E.E. Haller, Z.F. Fan, S.N. Mohammad, W. Kim, A.E. Botchkarev, and H. Morkoç, Appl. Phys.Lett., 69, 1556(1996)

    Article  Google Scholar 

  4. C. A. Dimitriadis, S. Logothetidis and I. Alexandrou, Appl. Phys. Lett., 66, 502(1995)

    Article  CAS  Google Scholar 

  5. C. A. Dimitriadis, T. Karakostas, S. Logothetidis, G. Kamarinos, J. Brini, and G. Nouet, Solid State Electron., in press

Download references

Author information

Authors and Affiliations

  1. Laboratoire d’Etudes et de Recherches sur les Matériaux, UPRESA 6004 CNRS, ISMRA, 6 boulevard Maréchal Juin, 14050, Caen Cedex, France

    P. Ruterana & G. Nouet

  2. Physics Department, Aristotle University, 54006, Thessaloniki, Greece

    Th. Kehagias, Ph. Komninou, Th. Karakostas & F. Huet

  3. Domaine de Corbeville, Thomson-CSF/Laboratoire Central de Recherches, 91404, Orsay Cedex, France

    M. A. Forte di Poisson

Authors
  1. P. Ruterana
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. G. Nouet
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Th. Kehagias
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Ph. Komninou
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Th. Karakostas
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. M. A. Forte di Poisson
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. F. Huet
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to P. Ruterana.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Ruterana, P., Nouet, G., Kehagias, T. et al. The microstructure and electrical properties of directly deposited TiN ohmic contacts to Gallium Nitride. MRS Online Proceedings Library 595, 1175 (1999). https://doi.org/10.1557/PROC-595-F99W11.75

Download citation

  • Published:

  • DOI: https://doi.org/10.1557/PROC-595-F99W11.75

Search

Navigation