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Growth of InN by MBE

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A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

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Authors and Affiliations

  1. School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA

    W. L. Chen & R. L. Gunshor

  2. Sandia National Laboratories, Albuquerque, NM, 87185, USA

    Jung Han

  3. Japan Advanced Institute of Science and Technology, Ishikawa, Japan

    K. Higashimine & N. Otsuka

Authors
  1. W. L. Chen
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  2. R. L. Gunshor
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  3. Jung Han
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  4. K. Higashimine
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  5. N. Otsuka
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Chen, W.L., Gunshor, R.L., Han, J. et al. Growth of InN by MBE. MRS Online Proceedings Library 595, 330 (1999). https://doi.org/10.1557/PROC-595-F99W3.30

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  • DOI: https://doi.org/10.1557/PROC-595-F99W3.30

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