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Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy

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Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of Θ = 0.3–0.4 was determined from Hall effect measurements. The formation energy of ON of EF = 1.3 eV, determined from the experimental data, is lower than the theoretically predicted value.

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Authors and Affiliations

  1. Materials Research Center and Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA

    R. Y. Korotkov & B. W. Wessels

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  1. R. Y. Korotkov
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  2. B. W. Wessels
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Korotkov, R.Y., Wessels, B.W. Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy. MRS Online Proceedings Library 595, 380 (1999). https://doi.org/10.1557/PROC-595-F99W3.80

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  • DOI: https://doi.org/10.1557/PROC-595-F99W3.80

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