Abstract
Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm−2, 6.0 × 1012 cm−2, and 5.8 × 1012 cm−2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. R. Smith, R. M. Feenstra, D. W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, J. E. Northrup, Appl. Phys. Lett., 72, 2114 (1998).
M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, L. F. Eastman, Electron. Lett., 32, 357, (1996).
Y.-F. Wu, B. P. Keller, P. Fini, S. Keller, T. J. Jenkins, L. T. Kehias, S. P. Denbaars, U. K. Mishra, Electron Dev. Lett., 19, 50 (1998).
R. Li, S. J. Cai, L. Wong, Y. Chen, K. L. Wang, R. P. Smith, S. C. Martin, K. S. Boutros, J. M. Redwing, Electron Dev. Lett., 20, 323 (1999).
S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, J. W. Palmour, L. T. Kehias, T. J. Jenkins, Electron Dev. Lett., 20, 161 (1999).
R. Gaska, M.S. Shur, A. D. Bykhovski, A. O. Orlov, G. L. Snider, Appl. Phys. Lett, 74, 287 (1999).
T. Wang, Y. Ohno, M. Lachab, D. Nakagawa, T. Shirahama, S. Sakai, H. Ohno, Appl. Phys. Lett., 74, 3531 (1999).
C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, K. Maranowski, J. P. Ibbeston, S. Keller, P. M. Petroff, S. P. Denbaars, U. K. Mishra, J. S. Speck, Appl. Phys. Lett., 74, 3528 (1999).
I. P. Smorchkova, C. R. Elsass, J. P. Ibbeston, R. Vetury, B. Heying, P. Fini, E. Haus, S. P. Denbaars, J. S. Speck, U. K. Mishra, J. Appl. Phys., 86, 4520 (1999).
L. K. Li, J. Alperin, W. I. Wang, D. C. Look, D. C. Reynolds, J. Vac. Sci. Technol. B, 16, 1275 (1998).
J. B. Webb, H. Tang, S. Rolfe, J. A. Bardwell, Appl. Phys. Lett., 75, 953 (1999).
H. Amano, M. Iwaya, T. Kashima, M. Katsuragawa, I. Akasaki, J. Han, S. Hearne, J. A. Floro, E. Chason, J. Figiel, Jpn. Journ. Appl. Phys., Part 2, 37, L1540 (1998).
W. I. Wang, Appl. Phys. Lett., 44, 1149 (1984).
J. S. Harris, S. M. Koch, S. J. Rosner, Mater. Res. Soc. Symp. Proc., 91, 3 (1987).
H. Kroemer, J. Crystal Growth, 81, 193 (1987).
H. Amano, N. Sawaki, I. Akasaki, Y. Toyoda, Appl. Phys. Lett., 48, 353 (1986).
D. C. Renolds, D. C. Look, J. Appl. Phys., 80, 594 (1996).
K. C. Zeng, J. Y. Lin, H. X. Jiang, W. Yang, Appl. Phys. Lett., 74, 3821 (1999).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Jurkovic, M.J., Li, L.K., Turk, B. et al. High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer. MRS Online Proceedings Library 595, 81 (1999). https://doi.org/10.1557/PROC-595-F99W8.1
Published:
DOI: https://doi.org/10.1557/PROC-595-F99W8.1