Abstract
New results on the etchability of lead implanted silicate glasses are presented which are satisfactorily accounted for by a Monte Carlo Model of etching. These results strongly support the radiation damage origin of the ion-induced modification of the chemical reactivity of glass. Major artefacts of ion implantation are then discarded as possible causes of the observed effects and consequently this technique is shown to be a valuable tool for the study of α-recoil aging in H.L.W. glasses.
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Dran, J.C., Langevin, Y., Maurette, M. et al. Radiation Effects in Radwaste Glasses: A Reappraisal of Alpha-Recoil Aging as Simulated by Ion Implantation. MRS Online Proceedings Library 6, 717–725 (1981). https://doi.org/10.1557/PROC-6-717
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DOI: https://doi.org/10.1557/PROC-6-717