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Electroluminescent Oxide Phosphor Thin Films Prepared by a Sol-gel Process

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Abstract

Ga2O3:Mn and (Ga2O3-SnO2):Eu thin films have been prepared by a sol-gel process. High luminance emissions were obtained in TFEL devices: green using a Ga2O3:Mn and red using a Ga2O3:Eu or a SnO2:Eu thin-film emitting layer. These sol-gel prepared devices were produced without using any vacuum processes and always exhibited higher luminances than equivalent devices prepared by r.f. magnetron sputtering: 40, 309 and above 1000 cd/m2 using SnO2:Eu, Ga2O3:Eu and Ga2O3:Mn phosphor thin films, respectively, in TFEL devices prepared by the sol-gel process and driven at 1kHz.

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Authors and Affiliations

  1. Electron Device System Laboratory, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa, 921-8501, Japan

    Tadatsugu Minami, Toshihiro Miyata, Tetsuya Shirai & Toshikuni Nakatani

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  1. Tadatsugu Minami
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  2. Toshihiro Miyata
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  3. Tetsuya Shirai
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  4. Toshikuni Nakatani
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Minami, T., Miyata, T., Shirai, T. et al. Electroluminescent Oxide Phosphor Thin Films Prepared by a Sol-gel Process. MRS Online Proceedings Library 621, 431 (2000). https://doi.org/10.1557/PROC-621-Q4.3.1

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  • DOI: https://doi.org/10.1557/PROC-621-Q4.3.1

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