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Strain-Induced Diffusion in Strained Sige/Si Heterostructures

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Abstract

Diffusivity of a strained heterostructure was theoretically investigated, and general diffusion equations with strain potential were deduced. There was an additional diffusivity by the strain potential gradient as well as by the concentration gradient. The strain-induced diffusivity was a function of concentration, and its temperature dependence was formulated. The activation energy of the strain-induced diffusivity was measured by high-resolution transmission electron microscopy. This result can be generally applied for the investigation of the diffusion in strained heterostructures.

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Authors and Affiliations

  1. Dept. of Mater. Sci. & Eng., KAIST, 337-1 Gusung-dong, Yusung-ku, Daejon, 305-701, Korea

    Y. S. Lim & J. Y. Lee

  2. SiGe Device Team, ETRI, 161 Kajong-dong, Yusung-ku, Daejon, 305-350, Korea

    H. S. Kim

  3. Surface Analysis Group, KRISS, 1 Doryong-dong, Yusung-ku, Daejon, 305-340, Korea

    D. W. Moon

Authors
  1. Y. S. Lim
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  2. J. Y. Lee
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  3. H. S. Kim
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  4. D. W. Moon
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Lim, Y.S., Lee, J.Y., Kim, H.S. et al. Strain-Induced Diffusion in Strained Sige/Si Heterostructures. MRS Online Proceedings Library 648, 112 (2000). https://doi.org/10.1557/PROC-648-P11.2

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  • DOI: https://doi.org/10.1557/PROC-648-P11.2

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