Skip to main content
SpringerLink
Log in

A new model for Boron diffusion retardation in SiGe-strained layers accounting for the mechanism of Boron trapping/detrapping by Ge atoms

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

The main drawbacks of the known models of the B diffusion in strained SiGe layers are summarized. A mechanism is suggested to self-consistently explain the main experimental features and original experimental data which considers the trapping of B atoms by Ge atoms during B diffusion in the Si lattice resulting in the retarded B diffusivity. Fluctuations of Ge atom numbers in a nearest B atom environment result in percolation mechanism of B transport through dilatation centers of random size. A new solid state transport modelis generalized by considering dispersion transport of positive and negative point dilatation defects.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. P.M. Fahey, P.B. Griffin, J.D. Plummer, Rev.Mod.Phys., vol. 62, No.2, p. 289, 1989.

    Article  Google Scholar 

  2. P. Dorner, W. Gust, B. Predel, et al., Phil.Mag., vol. 49 (No.4), p. 557, 1984.

    Article  CAS  Google Scholar 

  3. P. Fahey, S.S. Iyer, G.J. Scila, Appl.Phys.Lett., vol. 54, No.9, p. 843, 1989.

    Article  CAS  Google Scholar 

  4. P. Kuo, J.L. Hoyt, J.F. Gibbons, et al., Appl.Phys.Lett., vol. 62, No.6, p. 612, 1993.

    Article  CAS  Google Scholar 

  5. P. Kuo, J.L. Hoyt, J.F. Gibbons, et al., Appl.Phys.Lett., vol. 66, No.5, p. 580, 1995.

    Article  CAS  Google Scholar 

  6. N.E.B. Cowern, P.C. Zalm, P. van der Sluis, Phys. Rev. Lett., vol. 72 (No.16), p. 2585, 1994.

    Article  CAS  Google Scholar 

  7. G.H. Loechelt, G. Tam, J.W. Steele, et al., J.Appl.Phys., vol. 74, No.9, p. 5520, 1997.

    Article  Google Scholar 

  8. D. Krüger, P. Gaworzewski, R. Kurps, J.Vac.Sci.Tech., vol. B14, No.1, p. 341, 1996.

    Article  Google Scholar 

  9. S.M. Hu, Phys. Rev. Lett., vol. 63, No.22, p. 2492, 1989.

    Article  CAS  Google Scholar 

  10. S.M. Hu, D.C. Ahlgren, P.A. Ronsheim, Phys. Rev. Lett., vol. 67, No.11, p. 1450, 1991.

    Article  CAS  Google Scholar 

  11. S.M. Hu, Phys. Rev. (B), vol. 45, No.8, p. 4498, 1992.

    Article  CAS  Google Scholar 

  12. T.T. Fang, W.T.C. Fang, P.B. Griffin, Appl.Phys.Lett., vol. 68, No.6, p. 791, 1996.

    Article  CAS  Google Scholar 

  13. V.I. Kol’dyaev, IMEC Internal Report of 11th of March, 1998, (unpublished).

    Google Scholar 

  14. R.F. Lever, J.M. Bonnar, and F.W. Willoughby, J. Appl. Phys., vol. 83, No.4, p. 1988, 1998.

    Article  CAS  Google Scholar 

  15. P. Gaworzewski, D. Krüger, R. Kurps, et al., J.Appl.Phys., vol. 75, No.12, p. 7869, 1994.

    Article  CAS  Google Scholar 

  16. C.G. Van de Walle, and J. Neugebauer, Phys. Rev., (B), vol. 52, No.20, p. R14320, 1995.

    Article  Google Scholar 

  17. W.P. Maszada, T. Thompson, J.Appl.Phys., vol. 72, No.9, p. 4477, 1992.

    Article  Google Scholar 

  18. M.J. Aziz, E. Nygren, W.H. Christie, Mater.Res.Soc. Symp. Proc., vol. 36, p. 101, 1985.

    Article  CAS  Google Scholar 

  19. G. Subramanian, K.S. Jones, M.E. Law, Mat.Res.Soc.Symp., vol. 610, p. 10.1, 2000.

    Article  Google Scholar 

  20. H. Park, K.S. Jones, J.A. Slinkman, and M.E. Law, J.Appl.Phys., vol. 78, No.6, p. 3664, 1995.

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. PDF/Solutions, Inc 333 San Carlos, San Jose, CA, 95110, USA

    Victor I. Kol’dyaev

Authors
  1. Victor I. Kol’dyaev
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kol’dyaev, V.I. A new model for Boron diffusion retardation in SiGe-strained layers accounting for the mechanism of Boron trapping/detrapping by Ge atoms. MRS Online Proceedings Library 669, 34 (2001). https://doi.org/10.1557/PROC-669-J3.4

Download citation

  • Published:

  • DOI: https://doi.org/10.1557/PROC-669-J3.4

Search

Navigation