Skip to main content
SpringerLink
Log in

Circular Photogalvanic Effect in SiGe Semiconductor Quantum Wells

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

The photogalvanic effects, which require a system lacking inversion symmetry, become possible in SiGe based quantum well (QW) structures due to their built-in asymmetry. We report on observations of the circular and linear photogalvanic effects induced by infrared radiation in (001)-and (113)-orientedp-Si/Si1-xGex QW structures and analyse these observations in view of the possible symmetry of these structures. The circular photogalvanic effect arises due to optical spin orientation of free carriers in QWs with band splitting in k-space which results in a directed motion of free carriers in the plane of the QW. We discuss possible mechanisms that give rise to spin-splitting of the electronic subband states for different symmetries.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990).

    Article  CAS  Google Scholar 

  2. S.D. Ganichev, H. Ketterl, W. Prettl, E.L. Ivchenko, and L.E. Vorobjev, Appl. Phys. Lett. 77, 3146 (2000).

    Article  CAS  Google Scholar 

  3. S.D. Ganichev, E.L. Ivchenko, S.N. Danilov, J. Eroms, W. Wegscheider, D. Weiss, and W. Prettl, Phys. Rev. Lett. 86, 4358 (2001).

    Article  CAS  Google Scholar 

  4. E.L. Ivchenko and G.E. Pikus, Superlattices and Other Heterostructures. Symmetry and Optical Phenomena, Springer Series in Solid State Sciences, vol.110, Springer-Verlag, 1995; second edition 1997; Ch. 10.

  5. S.D. Ganichev, Physica B 273-274, 737 (1999).

    Article  CAS  Google Scholar 

  6. D.J. Bottomley, H.M. Van Driel, and J.-M. Baribeau, ( Proc. 22nd ICPS,World Scientific, Singapore, 1994) pp. 1572.

    Google Scholar 

  7. M. Seto, M. Helm, Z. Moussa, P. Boucaud, F.H. Julien, J.M. Lourtioz, J.F. Nützel, and G. Abstreiter, Appl. Phys. Lett. 65, 2969 (1994).

    Article  CAS  Google Scholar 

  8. D.J. Bottomley, H. Omi, and T. Ogino, J. Crysal Growth 225, 16 (2001).

    Article  CAS  Google Scholar 

  9. S.D. Ganichev, E. L. Ivchenko, and W. Prettl, Physica E, in press

  10. Yu.L. Bychkov and E.I. Rashba, J. Phys. C 17, 6039 (1984).

    Article  Google Scholar 

  11. R. Winkler, Phys. Rev. B 62, 4245 (2000).

    Article  CAS  Google Scholar 

  12. G.L. Bir and G.E. Pikus, Symmetry and Strain-induced Effects in Semiconductors (Wiley, New York 1974).

    Google Scholar 

  13. E.L. Ivchenko, A.Yu. Kaminski, and U. Rössler, Phys. Rev. B 54, 5852 (1996).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Fakultät für Physik, Universität Regensburg, 93040, Regensburg, Germany

    Sergey D. Ganichev, Franz-Peter Kalz, Ulrich Rössler & Wilhelm Prettl

  2. A. F. Ioffe Physico-Technical Institute, 194021, St. Petersburg, Russia

    Eugenius L. Ivchenko & Vasily V. Bel’kov

  3. Walter Schottky Institute, TU Munich, D-85748, Garching, Germany

    Robert Neumann, Karl Brunner & Gerhard Abstreiter

Authors
  1. Sergey D. Ganichev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Franz-Peter Kalz
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Ulrich Rössler
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Wilhelm Prettl
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Eugenius L. Ivchenko
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Vasily V. Bel’kov
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Robert Neumann
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. Karl Brunner
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. Gerhard Abstreiter
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Ganichev, S.D., Kalz, FP., Rössler, U. et al. Circular Photogalvanic Effect in SiGe Semiconductor Quantum Wells. MRS Online Proceedings Library 690, F3.11 (2001). https://doi.org/10.1557/PROC-690-F3.11

Download citation

  • Published:

  • DOI: https://doi.org/10.1557/PROC-690-F3.11

Search

Navigation