Abstract
Doping of hydrogenated amorphous silicon and germanium with boron, phosphorus, and arsenic is investigated. The incorporation of the dopants from the gas phase into the solid film is found to differ strongly for the various dopant-host systems. The doping efficiency is calculated from measurements of the density of dangling bond defects and of shallow band-tail states as a function of the doping level. A common square root dependence of the efficiency on dopant gas concentration is obtained.
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I would like to thank W.B. Jackson for helping me with the PDS measurements, and R.A. Street for numerous discussions.
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Stutzmann, M. Dopant Incorporation and Doping Efficiency in a-Si:H and a-Ge:H. MRS Online Proceedings Library 70, 203–208 (1986). https://doi.org/10.1557/PROC-70-203
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DOI: https://doi.org/10.1557/PROC-70-203