Abstract
Temperature-dependent resistance measurements of Bi-related nanowire arrays with different wire diameters and Sb concentrations are performed. The variation in the measured R(T) curves of these nanowires is closely related to the unique semimetal-semiconductor transition in Bi, and the results are explained by theoretical simulations. It is found that the special feature of the maximum in the resistance ratio R(10 K)/R(100 K) can be employed to experimentally identify the conditions for the semimetal-semiconductor transition.
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Acknowledgments
We thank Dr. G. Dresselhaus, Prof. G. Chen, and M. R. Black for valuable discussions. The support from MURI subcontract 0205-G-BB853, NSF grant DMR-01-16042, US Navy contracts N00167-98-K0024 and N66001-00-1-8603, and ONR grant N00014-02-1-0865 is gratefully acknowledged.
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Lin, YM., Cronin, S.B., Rabin, O. et al. Transport Properties and Observation of Semimetal-Semiconductor Transition in Bi-based Nanowires. MRS Online Proceedings Library 737, 314 (2002). https://doi.org/10.1557/PROC-737-F3.14
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DOI: https://doi.org/10.1557/PROC-737-F3.14