Skip to main content
SpringerLink
Log in

Dynamics of Rapid Solidification in Silicon

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

Real-time techniques were used to study rapid melt and solidification dynamics in silicon. In crystalline Si, the interface response function was characterized and found to be asymmetric for large deviations from the melting temperature, which will require reevaluation of conventional transition state treatments of melt and solidification. In amorphous Si, the mechanism of explosive crystallization was studied. The explosive transformation is mediated by a buried liquid layer, and detailed measurements have led to the suggestion that polycrystalline Si nucleates at the moving liquid-amorphous interface. For certain conditions, this process could yield fine-grained polycrystalline Si; for other conditions it permits epitaxial regrowth from the underlying crystalline Si for maximum melt thickness much less than the original amorphous layer thickness.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. See, e.g., L. A. Lompre, L. M. Liu, H. Kurz and N. Bloembergen, Appl. Phys. Lett. 43, 168 (1983).

    Article  CAS  Google Scholar 

  2. See, e.g., J. M. Poate and J. W. Mayer in Laser Annealing of Semiconductors, ed. by J. M. Poate and J. W. Mayer (Academic Press, New York, 1982), Ch. 1.

    Google Scholar 

  3. See, e.g., C. W. White, B. R. Appleton and S. R. Wilson in Ref. 2, Ch. 5.

  4. G. J. Galvin, Michael O. Thompson, J. W. Mayer, R. B. Hammond, N. Paulter and P. S. Peercy, Phys. Rev. Lett. 48, 33 (1982).

    Article  CAS  Google Scholar 

  5. D. H. Auston, C. M. Surko, T. N.C. Venkatesan, R. E. Slusher and J. A. Golovchenko, Appl. Phys. Lett. 33, 437 (1978).

    Article  CAS  Google Scholar 

  6. G. J. Galvin, J. W. Mayer and P. S. Peercy, Appl. Phys. Lett. 46, 644 (1985).

    Article  CAS  Google Scholar 

  7. Michael O. Thompson, P. H. Buckshaum and J. Bokor, Mat. Res. Soc. Proc. Vol. 35, 181 (1985).

    Article  CAS  Google Scholar 

  8. B. C. Larson, C. W. White, T. S. Noggle and D. M. Mills, Phys. Rev. Lett. 48, 337 (1982).

    Article  CAS  Google Scholar 

  9. S. U. Campisano, D. C. Jacobson, J. M. Poate, A. G. Cullis and N. G. Chew, Appl. Phys. Lett. 46, 846 (1985).

    Article  CAS  Google Scholar 

  10. P. S. Peercy, Michael O. Thompson and J. Y. Tsao, Appl. Phys. Lett. 47, 244 (1985).

    Article  CAS  Google Scholar 

  11. Michael O. Thompson, G. J. Galvin, J. W. Mayer, P. S. Peercy, J. M. Poate, D. C. Jacobson, A. G. Cullis and N. G. Chew, Phys. Rev. Lett. 52, 2360 (1984).

    Article  CAS  Google Scholar 

  12. P. S. Peercy, Michael O. Thompson, J. Y Tsao and J. M. Poate, Mat. Res. Soc. Proc, Vol. 51, 125 (1985).

    Article  Google Scholar 

  13. G. J. Galvin, Michael O. Thompson, J. W. Mayer, P. S. Peercy, R. B. Hammond, and N. Paulter, Phys. Rev. B27, 1079 (1983).

    Article  CAS  Google Scholar 

  14. P. Baeri, S. U. Campisano, G. Foti and E. Rimini, J. Appl. Phys. 50, 788 (1979).

    Article  CAS  Google Scholar 

  15. R. F. Wood and G. E. Giles, Phys. Rev. B23, 2923 (1981).

    Article  CAS  Google Scholar 

  16. Michael O. Thompson (unpublished).

  17. See, e.g., F. Spaepen and D. Turnbull in Laser Annealing of Semiconductors, ed. by J. M. Poate and J. W. Mayer (Academic Press, NY, 1982), pp.15–41

    Chapter  Google Scholar 

  18. J. Y. Tsao, M. J. Aziz, P. S. Peercy and Michael O. Thompson, (these proceedings).

  19. P. H. Bucksbaum and Michael O. Thompson (to be published)

  20. J. Y. Tsao, P. S. Peercy and Michael O. Thompson, J. Mater. Res. (to be published).

  21. B. C. Larson, J. Z. Tischler and D. M. Mills, J. Mater. Res. 1, 144 (1986)

    Article  CAS  Google Scholar 

  22. E. P. Donovan, F. Spaepen, D. Turnbull, J. M. Poate and D. C. Jacobson, J. Appl. Phys. 57, 1795 (1985).

    Article  CAS  Google Scholar 

  23. F. Spaepen and D. Turnbull in Laser-Solid Interactions and Laser Processing, ed. by S. D. Ferris, H. J. Leamy and J. M. Poate, 73–83 (AIP, New York, 1978).

    Google Scholar 

  24. B. G. Bagley and H. S. Chen in Ref. 23, pp. 97–101.

  25. G. Gore, Philos. Mag. 9, 73 (1855).

    Article  Google Scholar 

  26. D. H. Lowndes, G. E. Jellison, Jr., S. J. Pennycook, S. P. Withrow and D. N. Mashburn, Appl. Phys. Lett. 48, 1389 (1986).

    Article  CAS  Google Scholar 

  27. J. Narayan, C. W. White, O. W. Holland and M. J. Aziz, J. Appl. Phys. 56, 1821 (1984).

    Article  CAS  Google Scholar 

  28. W. Sinke and F. W. Saris, Phys. Rev. Lett. 53, 2121 (1984).

    Article  CAS  Google Scholar 

  29. P. S. Peercy, J. Y. Tsao, Michael O. Thompson and S. Stiffler (to be published).

  30. R. F. Wood and G. A. Geist, Phys. Rev. Lett. 57, 873 (1986).

    Article  CAS  Google Scholar 

  31. J. P. Bruines, R. P. M. van Hal, H. M. J. Boots, A. Polman and F. W. Saris, Appl. Phys. Lett. 49, 1160 (1986).

    Article  CAS  Google Scholar 

  32. J. Narayan, D. Fathy, O. S. Oen and O. W. Holland, Mater. Lett. 2, 211 (1984).

    Article  CAS  Google Scholar 

  33. G. Devaud and D. Turnbull, Appl. Phys. Lett. 46, 844 (1985).

    Article  CAS  Google Scholar 

  34. P. S. Peercy and Michael O. Thompson, Mat. Res. Soc. Symp. Proc., 35, 53 (1985).

    Article  CAS  Google Scholar 

  35. J. M. Liu, R. Yen, H. Kurz and N. Bloembergen, Appl. Phys. Lett. 39, 755 (1981).

    Article  CAS  Google Scholar 

  36. A. G. Cullis, H. C. Webber, N. G. Chew, J. M. Poate and P. Baeri, Phys. Rev. Lett. 49, 219 (1982).

    Article  CAS  Google Scholar 

  37. J. Y. Tsao and P. S. Peercy (to be published).

  38. Michael O. Thompson, J. W. Mayer, A. G. Cullis, H. C. Webber, N. G. Chew, J. M. Poate and D. C. Jacobson, Phys. Rev. Lett. 50, 896 (1983).

    Article  CAS  Google Scholar 

  39. P. S. Peercy, J. M. Poate, Michael O. Thompson and J. Y. Tsao, Appl. Phys. Lett. 48, 1651 (1986).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Sandia National Laboratories Albuquerque, 87185, New Mexico, USA

    P. S. Peercy

  2. Department of Materials Science Cornell University, New York, Ithaca, USA

    Michael O. Thompson & J. Y. Tsao

Authors
  1. P. S. Peercy
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Michael O. Thompson
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. J. Y. Tsao
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Peercy, P.S., Thompson, M.O. & Tsao, J.Y. Dynamics of Rapid Solidification in Silicon. MRS Online Proceedings Library 74, 15 (1986). https://doi.org/10.1557/PROC-74-15

Download citation

  • Published:

  • DOI: https://doi.org/10.1557/PROC-74-15

Search

Navigation