Abstract
We report the transient enhanced diffusion of supersaturated phosphorus in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or redissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follows their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactivation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.
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Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract DE-AC05-840R21400 with Martin Marietta Energy Systems, Inc.
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Pennycook, S.J., Culbertson, R.J. Transient Enhanced Diffusion in B+ and P+ Implanted Silicon. MRS Online Proceedings Library 74, 379 (1986). https://doi.org/10.1557/PROC-74-379
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DOI: https://doi.org/10.1557/PROC-74-379