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Characterization of Transparent and Conductive ZnO:Ga Thin Films Produced by Rf Sputtering at Room Temperature

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Abstract

Gallium-doped zinc oxide films were prepared by rf magnetron sputtering at room temperature as a function of the substrate-target distance. The best results were obtained for a distance of 10 cm, where a resistivity as low as 2.7×10-4 Ωcm, a Hall mobility of 18 cm2/Vs and a carrier concentration of 1.3×1021 cm-3 were achieved. The films are polycrystalline presenting a strong crystallographic c-axis orientation (002) perpendicular to the substrate. The films present an overall transmittance in the visible part of the spectra of about 85 %, in average. The low resistivity, accomplished with a high growth rate deposited at RT, enables the deposition of these films onto polymeric substrates for flexible applications.

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Authors and Affiliations

  1. Materials Science Department/CENIMAT, Faculty of Sciences and Technology of New University of Lisbon, Campus da Caparica, 2829-516, Caparica, Portugal

    E. Fortunato, V. Assunção, A. Marques, I. Ferreira, H. Águas, L. Pereira & R. Martins

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  1. E. Fortunato
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  2. V. Assunção
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  3. A. Marques
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  4. I. Ferreira
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  5. H. Águas
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  6. L. Pereira
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  7. R. Martins
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Fortunato, E., Assunção, V., Marques, A. et al. Characterization of Transparent and Conductive ZnO:Ga Thin Films Produced by Rf Sputtering at Room Temperature. MRS Online Proceedings Library 763, 519 (2002). https://doi.org/10.1557/PROC-763-B5.19

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  • DOI: https://doi.org/10.1557/PROC-763-B5.19

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