Abstract
Very high critical field, reasonable bulk electron mobility, and high thermal conductivity make 4H-Silicon carbide very attractive for high voltage power devices. These advantages make high performance unipolar switching devices with blocking voltages greater than 1 kV possible in 4H-SiC. Several exploratory devices, such as vertical MOSFETs and JFETs, have been reported in SiC. However, most of the previous works were focused on high voltage aspects of the devices, and the high speed switching aspects of the SiC unipolar devices were largely neglected. In this paper, we report on the static and dynamic characteristics of our 4H-SiC DMOSFETs. A simple model of the on-state characteristics of 4H-SiC DMOSFETs is also presented.
Similar content being viewed by others
References
M. Bhatnagar and B. J. Baliga, “Comparison of 6H-SiC, 3C-SiC, and Si for power devices,” IEEE Transactions on Electron Devices, Vol. 40, p. 645–655, March 1993.
http://www.ecn.purdue.edu/WBG/
J. Tan, J. A. Cooper Jr , and M. R. Melloch, “High-Voltage Accumulation-Layer UMOSFETs in 4H-SiC,” IEEE Electron Device Letters, Vol. 19, 487–489, December 1998.
D. Peters, R. Schorner, P. Friedrichs, J. Volkl, H. Mitlehner, D. Stephani, “An 1800 V triple implanted vertical 6H-SiC MOSFET,” IEEE Transactions on Electron Devices, vol.46, no.3, March 1999, pp.542–545.
W. J. Schaffer, G. H. Negley, K. G. Irvine, and J. W. Palmour, “Conductivity Anistropy In Epitaxial 6H and 4H SiC,” Mat. Res. Soc. Symp. Proc. Vol. 339 (1994), pp. 595–600.
G. Y. Chung, C. C. Tin, J. R. Williams, J. K. McDonald, M. Di Ventra, S. T. Pantelides, L. C. Feldman, R. A. Weller, “Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide,” Applied Physics Letters, 76(13) pp. 1713–1715, March 2000.
L. A. Lipkin, M. K. Das, and J. W. Palmour, “N2O Processing Improves the 4H-SiC:SiO2 Interface,” Materials Science Forum, Vols 389-393 (2002), pp. 985–988.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Ryu, SH., Agarwal, A.K., Richmond, J. et al. 4H-SIC Dmosfets for High Frequency Power Switching Applications. MRS Online Proceedings Library 764, 27 (2002). https://doi.org/10.1557/PROC-764-C2.7
Published:
DOI: https://doi.org/10.1557/PROC-764-C2.7