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Barrier Material Improvement in AlGaN/GaN Microwave Transistors Under Gamma Irradiation Treatment

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Abstract

Effect of small dose gamma-irradiation on electrical characteristics of AlGaN/GaN high electron mobility transistors has been investigated. Decreasing of the leakage current and its noise has been registered after dose of 1×106 Rad. As-grown heterostructures used in further for the device fabrication have been examined after the same radiation treatment. The small dose radiation results are explained within a model that takes into account relaxation of elastic strains and structural-impurity ordering occurring in the barrier layer under irradiation.

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References

  1. E.G. Brazel, M.A. Chin, and V. Narayanamurti, Appl. Phys. Lett., 74, 2367 (1999).

    Article  CAS  Google Scholar 

  2. J.W.P. Hsu, M.J. Manfra, D.V. Lang, S. Richter, S.N.G. Chu, A.M. Sergent, R.N. Kleiman, L.N. Pfeiffer, and R.J. Molnar, Appl. Phys. Lett., 78, 1685 (2001).

    Article  CAS  Google Scholar 

  3. J.W.P. Hsu, M.J. Manfra, R.J. Molnar, B. Heying, and J.S. Speck, Appl. Phys. Lett., 81, 79 (2002).

    Article  CAS  Google Scholar 

  4. S.J. Pearton, F. Ren, A.P. Zhang, and K.P. Lee, Mater. Sci. Eng. R Rep., R30, 55 (2000).

    Article  CAS  Google Scholar 

  5. P. Handel and R. Zuleeg in Proc. 1997 Advanced Workshop on Frontiers in Electronics, edited by G.S. Pomrenke, F. Schuermeyer, M. Shur, and J. Xu, (Tenerife, Spain, 6-11 January 1997) pp. 31–36.

    Book  Google Scholar 

  6. S.A. Vitusevich, N. Klein, A.E. Belyaev, S.V. Danylyuk, M.V. Petrychuk, R.V. Konakova, A.M. Kurakin, A.E. Rengevich, A.Yu.Avksentyev, B.A. Danilchenko, V. Tilak, J. Smart, A. Vertiatchikh and L.F. Eastman in, (Mater. Res. Soc. Proc. 719, 2002) pp.133–138.

    Article  CAS  Google Scholar 

  7. S.A. Vitusevich, N. Klein, A.E. Belyaev, S.V. Danylyuk, M.V. Petrychuk, R.V. Konakova, A.M. Kurakin, A.E. Rengevich, A.Yu. Avksentyev, B.A. Danilchenko, V. Tilak, J. Smart, A. Vertiatchikh and L.F. Eastman, Phys. Stat. Sol.(a) 195, 101 (2003).

    Article  CAS  Google Scholar 

  8. G.H. Olsen and M. Ettenberg, J. Appl. Phys. 48, 2543 (1977).

    Article  CAS  Google Scholar 

  9. S.A. Vitusevich, M.V. Petrychuk, N. Klein, S.V. Danylyuk, P. Javorka, M. Marso, P. Kordos, H. Lueth, and A.E. Belyaev, in Proc. 17th Intern. Conf. on Noise and Fluctuations, (Prague, Czech Republic, 18-22 August 2003), to be published.

  10. A.V. Vertiatchikh, L.F. Eastman, W.J. Schaff, and T. Prunty, Electronics Letters, 38, 388 (2002).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Forschungszentrum Jülich, ISG, 52425, Jülich, Germany

    S. A. Vitusevich, N. Klein & S. V. Danylyuk

  2. Taras Shevchenko Kiev National University, 01033, Kiev, Ukraine

    M. V. Petrychuk

  3. Institute of Semiconductor Physics, NASU, 03028, Kiev, Ukraine

    A. E. Belyaev, R. V. Konakova, A. Yu. Avksentyev, A. M. Kurakin & P. M. Lytvyn

  4. Institute of Physics, NASU, 03028, Kiev, Ukraine

    B. A. Danilchenko

  5. School of Electrical Engineering, Cornell University, 14853, Ithaca, New York, U.S.A.

    V. Tilak, J. Smart, A. Vertiatchikh & L. F. Eastman

Authors
  1. S. A. Vitusevich
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  2. M. V. Petrychuk
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  3. N. Klein
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  4. S. V. Danylyuk
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  5. A. E. Belyaev
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  6. R. V. Konakova
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  7. A. Yu. Avksentyev
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  8. A. M. Kurakin
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  9. P. M. Lytvyn
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  10. B. A. Danilchenko
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  11. V. Tilak
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  12. J. Smart
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  13. A. Vertiatchikh
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  14. L. F. Eastman
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Vitusevich, S.A., Petrychuk, M.V., Klein, N. et al. Barrier Material Improvement in AlGaN/GaN Microwave Transistors Under Gamma Irradiation Treatment. MRS Online Proceedings Library 764, 331 (2002). https://doi.org/10.1557/PROC-764-C3.31

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  • DOI: https://doi.org/10.1557/PROC-764-C3.31

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