Abstract
Electron injection into p-type GaN and related compounds leads to a pronounced increase in the minority carrier lifetime. This increase is manifested in a multiple-fold elongation of the minority carrier diffusion length as is evident from the Electron Beam Induced Current (EBIC) measurements in-situ in a Scanning Electron Microscope. Minority carrier transport enhancement as a result of electron injection is consistent with the changes observed in the material’s luminescent properties. Based on the activation energy for the electron injection-induced effects, we ascribe this phenomenon to charging of Mg-acceptor related levels. In addition, we demonstrate an impact of electron injection on responsivity of GaN p-i-n photodetectors.
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References
L. Chernyak, A. Osinsky, V. Fuflyigin, E.F. Schubert, Appl. Phys. Lett. 77, 875 (2000).
L. Chernyak, A. Osinsky, A. Schulte, Solid State Electron. 45, 1687 (2001).
L. Chernyak, G. Nootz, A. Osinsky, Electron. Lett. 37, 922 (2001).
L. Chernyak, A. Schulte, A. Osinsky, J. Graff, E.F. Schubert, Appl. Phys. Lett. 80, 926 (2002).
L. Chernyak, A. Osinsky, H. Temkin, J.W. Yang, Q. Chen, M.A. Khan, Appl. Phys. Lett. 69, 2531 (1996).
M. Eckstein, A. Jakubowicz, M. Bode, H.-U. Habermeier, Proc. SPIE 1284, 228 (1990).
A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Osinsky, P.E. Norris, S.J. Pearton, J. Van Hove, A.M. Wowchack, P.P. Chow, J. Appl. Phys. 90, 4032 (2001).
W. Gotz, R.S. Kern, C.H. Chen, H. Liu, D.A. Steigerwald, R.M. Fletcher, Mat. Sci. Eng. B59, 211 (1999).
J.Z. Li, J.Y. Lin, H.X. Jiang, A. Salvador, A. Botchkarev, H. Morkoc, Appl. Phys. Lett. 69, 1474 (1996).
O. Gelhausen, H.N. Klein, M.R. Phillips, E.M. Goldys, Appl. Phys. Lett. 81, 3747 (2002).
J.I. Pankove, Optical Processes in Semiconductors (Prentice-Hall, Englewood Cliffs, New Jersey, 1971).
S.M. Sze, Semiconductor Devices Physics and Technology (Wiley & Sons, New York, 1985) pp. 49–50.
C. Johnson, J.Y. Lin, H.X. Jiang, M.A. Khan, C.J. Sun, Appl. Phys. Lett. 68, 1808 (1996).
A.K. Rice, K.J. Malloy, J. Appl. Phys. 89, 2816 (2001).
L. Chernyak, A. Osinsky, G. Nootz, A. Schulte, J. Jasinski, M. Benamara, Z. LilientalWeber, D.C. Look, R.J. Molnar, Appl. Phys. Lett. 77, 2695 (2000).
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Chernyak, L., Burdett, W. Electron Injection-Induced Effects in GaN: Physics and Applications. MRS Online Proceedings Library 764, 54 (2002). https://doi.org/10.1557/PROC-764-C5.4
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DOI: https://doi.org/10.1557/PROC-764-C5.4