Abstract
Differences in the optical activity of Be in GaN epilayers grown on different surface polarities by rf-plasma molecular beam epitaxy are investigated. Nitrogen-polar GaN doped with Be exhibits a significantly higher intensity of donor-acceptor pair (DAP) photo-luminescence (PL) than similarly doped Ga-polar GaN, indicating the Be is incorporating at microscopically different sites, or possibly is forming different compensating complexes. Highly Be-doped Ga-polar GaN apparently forms isolated polarity-inverted regions which then incorporate Be via the N-polar mechanism resulting in the DAP PL. High temperature annealing of the Ga-polar layers both under nitrogen/hydrogen mixtures and under pure nitrogen atmospheres activates the DAP PL.
Similar content being viewed by others
References
M.A. Sanchez-Garcia, E. Calleja, F.J. Sanchez, F. Calle, E. Monroy, D. Basak, E. Munoz, C. Villar, A. Sanz-Hervas, M. Aguilar, J.J. Serizan and J. M. Blanco, J. Elec. Mat. 27, 276 (1998)
D. J. Dewsnip, A. V. Andrianov, I. Harrison, J. W. Orton, D. E. Lacklison, G. B. Ren, S.E. Hooper, T. S. Cheng and C. T. Foxon, Semicond. Sci. Technol. 13, 500 (1998)
K.H. Ploog and O. Brandt, J. Vac. Sci. Technol. A 16, 1609 (1998)
Yuejun Sun, Leng Seow Tan, Soo Jin Chua and Savarimuthu Prakash, Mat. Res. Soc. Symp. 595, W3.82.1 (2000)
Yoshitaka Nakano and Takashi Jimbo, Appl. Phys. Lett. 81, 3990 (2002)
T.H. Myers, L.S. Hirsch, L.T. Romano, and M.R. Richards-Babb, J. Vac. Sci. Technol. B16, 2261 (1998)
A.R. Smith, V. Ramachandran, R.M. Feenstra, D.W. Greve, A. Ptak, T. H. Myers, W. Sarney, L. Salamanca-Riba, M. Shin and M. Skowronski, MRS Internet J. Nitride Semicond. Res. 3, 12 (1998)
E.J. Tarsa, B. Heying, X.H. Wu, P. Fini, S.P. DenBaars, and J.S. Speck, J. Appl. Phys. 82, 5472 (1997)
A.J. Ptak, Lijun Wang, N.C. Giles, T.H. Myers, L.T. Romano, C. Tian, R.A. Hockett, S. Mitha and P. Van Lierde, Appl. Phys. Lett. 79, 4524 (2001)
D.A. Stocker, E.F. Schubert and J.M. Redwing, Appl. Phys. Lett. 73, 2654 (1998)
F.J. Sanchez, F. Calle, M.A. Sanchez-Garcia, E. Calleja, E. Munoz, C.H. Molloy, D.J. Somerford, J.J. Serrano and J.M. Blanco, Semicond. Sci. Technol. 13, 1130 (1998)
A.J. Ptak, T.H. Myers, Lijun Wang, N.C. Giles, M. Moldovan, C.R. Da Cunha, L.A. Hornak, C. Tian, R.A. Hockett, S. Mitha and P. Van Lierde, Mat. Res. Soc. Symp. 639, G3.3 (2001)
T.H. Myers, A.J. Ptak, Wang Lijun, and N.C. Giles, Inst. of Pure and Appl. Phys. Conference Series 1, 451 (2000)
F.A. Reboredo and S.T. Pantelides, Phys. Rev. Lett. 82, 1887 (1999)
F. Calle, F.J. Sanchez, J.M.G. Tijero, M.A. Sanchez-Garcia, E. Calleja and R. Beresford, Semicond. Sci. Technol. 12, 1396 (1997)
E. Calleja, M.A. Sanchez-Garcia, F. Calle, F.B. Naranjo, E. Munoz, U. Jahn, K. Ploog, J. Sanchez, J. M. Calleja, K. Saarinen and P. Hautojarvi, Mat. Sci. and Eng. B 82, 2 (2001)
Acknowledgments
We thank C. Y. Peng for assistance with the annealing studies. This work was supported by ONR Grants N00014-02-1-0974 and N00014-01-1-0571, both monitored by Colin E. C. Wood.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Van Mil, B.L., Lee, K., Wang, L. et al. Thermal Activation of Beryllium in GaN Grown by RF-Plasma Molecular Beam Epitaxy. MRS Online Proceedings Library 798, 187–192 (2003). https://doi.org/10.1557/PROC-798-Y10.59
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-798-Y10.59