Abstract
In a recent paper [Phys. Rev. B 68, 153313 (2003)], we reported the first experimental observation of the strong coupling regime in a GaN-based microcavity. The λ/2 GaN optical cavity was grown by molecular beam epitaxy on a Si(111) substrate. The upper mirror is a SiO2/Si3N4 dielectric mirror and the silicon substrate acts as the bottom mirror. With such a relatively simple and low-finesse microcavity, a Rabi splitting of 31 meV was measured at 5K. On the basis of this very encouraging result, approaches to fabricate high-finesse GaN-based cavities exhibiting strong coupling with stable polaritons at room temperature are discussed.
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Acknowledgments
The authors are grateful to O. Tottereau and P. Vennéguès for transmission electron microscopy. The authors are indebted to S. Walker (University of Sheffield) and D. Poitras (CNRC) for dielectric mirror deposition, and to R. Butté and M. S. Skolnick for their interest in this work. This work was supported by the EC-RTN “CLERMONT” program, Contract No. HPRN-CT-1999-00132.
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Semond, F., Byrne, D., Natali, F. et al. Advances in the Realisation of GaN-Based Microcavities: Towards Strong Coupling at Room Temperature. MRS Online Proceedings Library 798, 677–682 (2003). https://doi.org/10.1557/PROC-798-Y6.5
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DOI: https://doi.org/10.1557/PROC-798-Y6.5