Abstract
Photoluminescence (PL) spectra, luminescence dynamics and luminescence saturation of the Er3+4I13/2 → 4I15/2 transition in Er-implanted GaN samples at 7K are investigated. Under below-gap excitation, different Er centers are identified. Several Er centers are clearly excited via local defects or impurities. Er-defect complexes excited by above or below bandgap light are compared. Luminescence dynamics study shows that the 4I13/2 manifold has a shorter lifetime when Er ions are part of Er-defect complexes than when Er ions are isolated from any defect. The saturation of Er luminescence is investigated for the different types of Er center corresponding to specific excitation wavelengths.
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Braud, A., Abouzaid, M., Wojdak, M. et al. Above and below Bandgap Excitation of Er-defect Complexes and Isolated Er in Er-implanted GaN. MRS Online Proceedings Library 798, 731–735 (2003). https://doi.org/10.1557/PROC-798-Y8.3
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DOI: https://doi.org/10.1557/PROC-798-Y8.3