Skip to main content
SpringerLink
Log in

Suppression of Ni Silicide Formation by Se Passivation of Si(001)

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

Valence mending of a semiconductor surface, such as the Se-passivated Si(001) surface, improves the chemical and thermal stability of the surface as compared to the bare Si(001) surface. In this paper, we report the suppression of Ni silicide formation between Ni and Si(001) through monolayer passivation of Si(001) by Se. Ni was deposited on both Se-passivated and bare Si(001) surfaces. The samples were annealed at temperatures from 400°C to 700°C. Cross-sectional TEM (Transmission Electron Microscopy) revealed that Ni on bare samples reacted with Si at 400°C and formed silicide, whereas Ni on Se-passivated samples did not react with Si at 500°C. Surface composition analysis by XPS (X-Ray Photoelectron Spectroscopy) showed pure Ni surface on Se-passivated samples annealed at 400°C and 500°C, but silicide surface on bare samples annealed at the same temperatures. Hence, Se passivation suppresses the formation of Ni silicide on the Si(001) surface by over 100°C as compared to the bare Si(001) surface. These results may have important implications in source/drain engineering in sub-100 nm Si CMOS (Complementary Metal Oxide Semiconductor) devices.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. E. Kaxiras, Phys. Rev. B 43, 6824 (1991).

    Article  CAS  Google Scholar 

  2. M. Tao, D. Udeshi, N. Basit, E. Maldonado, and W. P. Kirk, Appl. Phys. Lett. 82, 1559 (2003).

    Article  CAS  Google Scholar 

  3. H. Foll, P. S. Ho, and K. N. Tu, Phil. Mag. A 45, 31 (1981).

    Article  Google Scholar 

  4. T. Morimoto, T. Ohguro, H. S. Momose, T. Iinuma, I. Kunishima, K. Suguro, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata, and H. Iwai, IEEE Trans. Electron Devices 42, 915 (1995).

    Article  CAS  Google Scholar 

  5. K.-N. Tu, E. I. Alessandrini, W.-K. Chu, H. Krautle, and J. W Mayer, Jpn. J. Appl. Phys. Suppl. 2, part 1, 669 (1974).

    Article  Google Scholar 

  6. M. Tao, D. Udeshi, S. Agarwal, E. Maldonado, and W. P. Kirk, Solid-State Electron. 48, 335 (2004).

    Article  CAS  Google Scholar 

Download references

Acknowledgments

Acknowledgement is made to National Science Foundation and Texas Advanced Technology Program for their support of this research.

Author information

Authors and Affiliations

  1. FAB Center and Department of Electrical Engineering, University of Texas at Arlington, Arlington, TX, 76019, USA

    Janadass Shanmugam, Michael Coviello, Darshak Udeshi, Wiley P. Kirk & Meng Tao Nano

Authors
  1. Janadass Shanmugam
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Michael Coviello
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Darshak Udeshi
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Wiley P. Kirk
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Meng Tao Nano
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Shanmugam, J., Coviello, M., Udeshi, D. et al. Suppression of Ni Silicide Formation by Se Passivation of Si(001). MRS Online Proceedings Library 810, 184–189 (2003). https://doi.org/10.1557/PROC-810-C4.1

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-810-C4.1

Search

Navigation