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Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer

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Abstract

The germanosilicidation of Ni on strained (001) Si0.8Ge0.2, particularly Ge segregation, grain boundary grooving, and surface morphology, during rapid thermal annealing (RTA) was studied. High-resolution cross-sectional transmission electron microscopy (HRXTEM) suggested that Ge-rich Si1−zGez segregation takes place preferentially at the germanosilicide/Si1−xGex interface, more specifically at the triple junctions between two adjacent NiSi1−uGeu grains and the underlying epi Si1−xGex, and it is accompanied with thermal grooving process. The segregation process accelerates the thermal grooving of NiSi1−uGeu grain boundaries at the interface. The segregation-accelerated grain boundary grooving has significant effect on the surface morphology of NiSi1−uGeu films in Ni-SiGe system.

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Authors and Affiliations

  1. Institute of Materials Research & Engineering, 3 Research Link, Singapore, 117602

    H.B. Yao, D.Z. Chi, S. Tripathy, S.Y. Chow, W.D. Wang & S. J. Chua

  2. Department of Materials Science, University of Michigan, Ann Arbor, MI, 48109-2136, USA

    H.P. Sun & X.Q. Pan

Authors
  1. H.B. Yao
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  2. D.Z. Chi
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  3. S. Tripathy
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  4. S.Y. Chow
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  5. W.D. Wang
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  6. S. J. Chua
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  7. H.P. Sun
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  8. X.Q. Pan
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Yao, H., Chi, D., Tripathy, S. et al. Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer. MRS Online Proceedings Library 810, 237–242 (2003). https://doi.org/10.1557/PROC-810-C4.7

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  • DOI: https://doi.org/10.1557/PROC-810-C4.7

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