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Accurate Monte Carlo Simulation of Ion Implantation into Arbitrary 1D/2D/3D Structures for Silicon Technology

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Abstract

We present an integrated Monte Carlo implant simulator which is capable of accurately simulating ion implantation into any amorphous materials and crystalline Si for 1D/2D/3D structures with arbitrary geometry and topography. With this simulator, we investigate some practical examples which reveal interesting 2D/3D effects, and demonstrate the importance of <110> channeling for sub-100nm silicon technology.

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Authors and Affiliations

  1. Synopsys, Inc., 14911 Quorum Dr., Dallas, Texas, 75254, USA

    Shiyang Tian

  2. Synopsys, Inc., 700 East Middlefield Road, Mountain View, CA, 94043, USA

    Victor Moroz & Norbert Strecker

Authors
  1. Shiyang Tian
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  2. Victor Moroz
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  3. Norbert Strecker
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Tian, S., Moroz, V. & Strecker, N. Accurate Monte Carlo Simulation of Ion Implantation into Arbitrary 1D/2D/3D Structures for Silicon Technology. MRS Online Proceedings Library 810, 316–321 (2003). https://doi.org/10.1557/PROC-810-C6.5

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  • DOI: https://doi.org/10.1557/PROC-810-C6.5

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