Skip to main content
SpringerLink
Log in

Excimer Laser Crystallization of Sputter Deposited a-Si Films on Flexible Substrates

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

In this report, excimer laser annealed polycrystalline silicon (poly-Si) films on flexible polymer substrates are investigated. The amorphous silicon (a-Si) films were first deposited on polycarbonate (PC) and polyethersulfone (PES) substrates by radio-frequency (RF) magnetron sputter and sequentially annealed by XeCl excimer laser annealing system (λ = 308 nm). The argon concentration of a-Si films which was estimated by Rutherford Backscattering Spectrometry (RBS) was found to be dependent on the dynamic pressure during the deposition process and the sputtering gas. Typically, the argon concentration of a-Si film was 1 ~ 2% when the film was deposited using argon gas at 6 mTorr. After the annealing process, the average grain size of the poly-Si film annealed with laser energy density of 289 mJ/cm2 was 400 nm estimated from transmission electron microscope (TEM) investigations.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. F. Matsumoto, T. Nagata, T. Miyabori, H. Tanaka and S. Tsushima, SID93 DIGEST, 965 (1993).

    Google Scholar 

  2. R. P. Wenz and D. J. W. Aastuen, SID93 DIGEST, 961 (1993).

    Google Scholar 

  3. A. Asano, T. Kinoshita and N. Otani, SID03 DIGEST, 988 (2003).

    Google Scholar 

  4. S. Inoue, S. Utsunomiya and T. Shimoda, SID03 DIGEST, 984 (2003).

    Google Scholar 

  5. J. S. Im and R. S. Sposili, MRS Bulletin, 21, 39 (1996).

    Article  CAS  Google Scholar 

  6. J. S. Im and H. J. Kim, Appl. Phys. Lett. 64, 2303 (1994).

    Article  CAS  Google Scholar 

  7. A. T. Voutsas, A. M. Marmorstein and R. Solanki, J. Electrochem. Soc. 146, 3500 (1999).

    Article  CAS  Google Scholar 

  8. S. Y. Yoon, J. Y. Oh, C. O. Kim and J. Jang, J. Appl. Phys. 84, 6463 (1998).

    Article  CAS  Google Scholar 

  9. A. T. Voutsas, Mat. Res. Soc. Symp. Proc. 685E, D7.3.1 (2001).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Information Display Research Center, Korea Electronics Technology Institute, Pyungtaek, Kyunggi, Korea

    Yong Hoon Kim, Sung Kyu Park, Dae Gyu Moon, Won Keun Kim & Jeong In Han

Authors
  1. Yong Hoon Kim
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Sung Kyu Park
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Dae Gyu Moon
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Won Keun Kim
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Jeong In Han
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kim, Y.H., Park, S.K., Moon, D.G. et al. Excimer Laser Crystallization of Sputter Deposited a-Si Films on Flexible Substrates. MRS Online Proceedings Library 814, 18–23 (2004). https://doi.org/10.1557/PROC-814-I7.5

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-814-I7.5

Search

Navigation