Abstract
We present a novel scheme for generating high energy ultrashort pulses in modelocked semiconductor lasers using a fast saturable absorber based upon intersubband transitions (ISBT) in GaN/AlGaN superlattice. The fast electron relaxation time (~100-300 fs) in this saturable absorber enables the generation of stable sub-100 fs pulses at the communication wavelength (1.55μm) with high pulse energies (5-10 pJ).
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This research is supported by the NSF.
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Ahmad, F.R., George, P., Dawlaty, J. et al. Ultrashort Pulse Generation with Semiconductor Modelocked Lasers Using Saturable Absorbers Based on Intersubband Transitions in GaN/AlGaN Quantum Wells. MRS Online Proceedings Library 829, 274–279 (2004). https://doi.org/10.1557/PROC-829-B4.1
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DOI: https://doi.org/10.1557/PROC-829-B4.1