Abstract
We present an approach for spectroscopic strain analysis in semiconductor quantum-well devices. This approach is applicable to all types of semiconductor materials, and to spectroscopic techniques which employ the electronic band-structure of the material, such as photoluminescence, photoreflection, photocurrent, and transmittance. The approach is based on two components, namely the theoretical calculation of the strain-sensitivity of the spectral positions of the relevant quantum-confined optical transitions within a particular quantum-well, and the spatially resolved measurement of a substantial part of the optical transition sequence within the quantum-well. The primary experimental technique applied in our approach is photocurrent spectroscopy. InAlGaAs/GaAlAs/GaAs, high-power lasers serve as the model species.
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Mark L. Biermann, Steven Duran, Kelsey Peterson, Axel Gerhardt, Jens W. Tomm, Witold Trzeciakowski, and Artem Bercha J. Appl. Phys. 96, 4056 (2004).
W. C. Tang, H. J. Rosen, S. Guha, and A. Madhukar, Appl. Phys. Lett. 58, 1644 (1991).
P. Martin, J. P. Landesman, J. P. Hirtz, and A. Fily, Appl. Phys. Lett. 75, 2521 (1999).
A. Borowiec, D. M. Bruce, Daniel T. Cassidy, and H. K. Haugen, Appl. Phys. Lett. 83, 225 (2003).
J. W. Tomm, R. Müller, A. Bärwolff, T. Elsaesser, D. Lorenzen, F. X. Daiminger, A. Gerhardt, and J. Donecker, Appl. Phys. Lett. 73, 3908 (1998).
C. H. Henry, P. M. Petroff, R. A. Logan, and F. R. Merrit, J. Appl. Phys. 50, 3721 (1979).
Jens W. Tomm, Axel Gerhardt, Roland Müller, Mark L. Biermann, Joseph P. Holland, Dirk Lorenzen, and Eberhard Kaulfersch, Appl. Phys. Lett. 82, 4193 (2003).
Martin Behringer, Marc Philippens, W. Teich, Alexis Schmitt, Stefan Morgott, Joerg Heerlein, Gerhard Herrmann, Johann Luft, G. Seibold, Jens Biesenbach, Thomas Brand, and Marcel Marchiano, Proc. SPIE 4993, 68 (2003).
C. Mailhiot and D. L. Smith, Phys. Rev. B 33, 8360 (1986).
C. Mailhiot and D. L. Smith, Phys. Rev. B 35, 1242 (1987).
I. Vurgaftman, J. R. Meyer and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).
J. W. Tomm, A. Gerhardt, T. Elsaesser, D. Lorenzen, and P. Hennig, Appl. Phys. Lett. 81, 3269 (2002).
Axel Gerhardt, Fritz Weik, Tien QuocTran, Jens W. Tomm, Thomas Elsaesser, Jens Biesenbach, Holger Müntz, Gabriele Seibold, and Mark L. Biermann, Appl. Phys. Lett. 84, 3525 (2004).
Acknowledgments
J. Luft and M. Behringer of Osram Opto Semiconductors Regensburg, P. Hennig and D. Lorenzen of Jenoptik Laserdiode Jena, and J. Biesenbach and H. Müntz of Dilas Mainz provided high-quality diode laser devices.
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Tomm, J.W., Biermann, M.L., Passmore, B.S. et al. Spectroscopic analysis of external stresses in semiconductor quantum-well materials. MRS Online Proceedings Library 829, 280–289 (2004). https://doi.org/10.1557/PROC-829-B4.4
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DOI: https://doi.org/10.1557/PROC-829-B4.4