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Multiple-Trapping Model with Meyer-Neldel Effect and Field-Dependent Effects: Time-Of-Flight Simulations for a-Si:H

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Abstract

We have included both the Meyer-Neldel rule and field assisted detrapping in the multiple- trapping model, assuming exponential band tails of localized states. Monte Carlo simulations with fixed parameters provide transient currents and comparison of calculated and measured mobility, µ(T,F), and pre-transit dispersion parameter, α1(T,F), which are presented for temperatures ranging from 25 K to 333 K and fields from 20 kV/cm to 400 kV/cm. We observe that the values of µ(T,F) and α1 (T,F) are improved with this combined model. Although this model provides satisfactory results for carrier transport for all temperature and field, differences in experimental data causes deviation of simulated results from experiment.

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Authors and Affiliations

  1. Department of Engineering Physics, École Polytechnique de Montreal, Montréal, Quebec, Canada

    Jesse Maassen & Arthur Yelon

  2. Department of Physics, Universite de Montreal, Montréal, Quebec, Canada

    Louis-Andre Hamel

  3. ANIQ R&D Ltd., Montreal, Quebec, Canada

    Wen Chao Chen

Authors
  1. Jesse Maassen
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  2. Arthur Yelon
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  3. Louis-Andre Hamel
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  4. Wen Chao Chen
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Maassen, J., Yelon, A., Hamel, LA. et al. Multiple-Trapping Model with Meyer-Neldel Effect and Field-Dependent Effects: Time-Of-Flight Simulations for a-Si:H. MRS Online Proceedings Library 862, 152 (2004). https://doi.org/10.1557/PROC-862-A15.2

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  • DOI: https://doi.org/10.1557/PROC-862-A15.2

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